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| SHINDENGEN Schottky Rectifiers (SBD) Single DG1H3 30V 1A OUTLINE DIMENSIONS Case : G1F Unit : mm RATINGS Absolute Maximum Ratings iTl=25 unless otherwise specified) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Ta = 26, *1 IO 50Hz sine wave, R-load, Tl = 113, *3 IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Peak Surge Forward Current Electrical Characteristics iTl=25 unless otherwise specified) Item Symbol Conditions VF Forward Voltage IF=0.2A, Pulse measurement VF IF=0.7A, Pulse measurement IR Reverse Current VR=VRM, Pulse measurement Cj Junction Capacitance f=1MHz, VR=10V AEja junction to ambient, *1 Thermal Resistance AEja junction to ambient, *2 AEja junction to ambient, *3 AEjl junction to lead, *3 *1 *2 *3 Measured on the 1x1 inch phenol substrate (pattern area : 32.6mm2) Measured on the 1x1 inch phenol substrate (pattern area : 160mm2) Measured on the 2x2 inch alumina substrate (pattern area : 2100mm2) Ratings -55 to 125 125 30 0.7 1.0 20 Ratings Max 0.30 Max 0.36 Max 1 Typ 37 Max 210 Max 120 Max 70 Max 20 Unit V A A A Unit V V mA pF /W Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd. DG1H3 10 Forward Voltage 5 IF [A] Forward Current 2 1 Tl=125C [MAX] Tl=125C [TYP] Tl= 25C [MAX] Tl= 25C [TYP] 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage VF [V] DG1H3 100 Reverse Current Tl=125C [TYP] Tl=100C [TYP] 10 IR [mA] Tl=75C [TYP] Reverse Current 1 Tl=50C [TYP] Tl=25C [TYP] 0.1 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] DG1H3 0.6 Forward Power Dissipation DC D=0.8 PF [W] 0.5 0.3 0.2 0.4 0.05 0.3 0.1 SIN 0.5 Forward Power Dissipation 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IO [A] Average Rectified Forward Current Tj =125C IO 0 tp D=tp/T T DG1H3 Reverse Power Dissipation 4 3.5 3 2.5 2 0.5 1.5 1 SIN 0.8 0.5 0 DC D=0.05 0.1 0.2 0.3 Reverse Power Dissipation PR [W] 0 5 10 15 20 25 30 35 Reverse Voltage Tj =125C 0 VR [V] VR tp D=tp/T T DG1H3 1.4 Derating Curve 1.2 IO [A] Average Rectified Forward Current DC 1 D=0.8 0.8 0.5 SIN 0.6 0.3 0.2 0.4 0.1 0.05 0.2 0 0 20 40 60 80 100 120 140 Ambient Temperature Ta [C] VR = 15V IO Glass-epoxy substrate substrate 0 0 VR tp D=tp/T T Soldering 1.2mm x 1.2mm Conductor layer 35 m DG1H3 2 Derating Curve Average Rectified Forward Current DC 1.5 D=0.8 IO [A] 0.5 1 SIN 0.3 0.2 0.5 0.1 0.05 0 0 20 40 60 80 100 120 140 Ambient Temperature VR = 15V Tl [C] IO Alumina substrate substrate 0 0 VR tp D=tp/T T Soldering 1.2mm x 1.2mm Conductor layer 35 m DG1H3 30 Peak Surge Forward Capability IFSM 10ms 10ms 25 1 cycle IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 20 Peak Surge Forward Current 15 10 5 0 1 2 5 10 20 50 Number of Cycles [cycle] DG1H3 1000 Junction Capacitance f=1MHz Tl=25C TYP Junction Capacitance Cj [pF] 100 10 0.1 0.2 0.5 1 2 5 10 20 30 Reverse Voltage VR [V] |
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